Study on the Role of Absorption Defect Density, Layer Thickness and Transport Layer Doping Concentration on the Performance of Lead Free Perovskite Solar Cell
DOI:
https://doi.org/10.9734/bpi/naer/v7/11091DKeywords:
Defect density, absorber layer thickness, SCAPS-1D, carrier concentration, tin based perovskite solar cellAbstract
The perovskite solar cells (PSCs) are the fastest-growing PV technology to date. Just within a decade, the power conversion efficiency (PCE) has been increased from 3.8% to 25.5%. The efficient PSCs ate toxic in nature due to incorporation of Lead (Pb). In this work, we study about less toxic Pb free MASnI3 based PSCs. The highest PCE obtained by Pb based PSC is 25.5% whereas Sn based PSC is much less 13%. In this work, we simulate and analyze MASnI3 based PSC and obtained PCE comparable to the leading Pb based PSC of 23.4%. We estimated the appropriate doping density concentration required for both electron transport layer (ETL) and hole transport layer (HTL). The ideal absorber thickness required of the proposed device configuration along with the permissible range of absorber layer defect density is studied.