Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction

Authors

  • Yu Yao School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.
  • Dandan Sang School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.
  • Liangrui Zou School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.
  • Xueting Wang School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.
  • Qinglin Wang School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.

DOI:

https://doi.org/10.9734/bpi/rtcams/v7/3552E

Keywords:

ZnO nanowires, diamond-based, heterojunction, electrical transport behavior

Abstract

This work explores the high-temperature carrier electrical transport behavior of n-ZnO nanowires (NWs)/p-diamond heterojunctions. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than the larger diameter of n-ZnO nanorods (NRs)/p-BDD heterojunction. The temperature-dependent carrier transport mechanisms, recombination-tunneling and space-charge-limited current conduction in n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions at different bias voltages are discussed. The proposed equilibrium energy band diagrams are used to analyse the carrier injection process mechanism for ZnO NWs/BDD. The ZnO NWs/BDD heterojunction presents improved I-V characteristics and relatively high performance for the electrical transport properties. This research further expands and optimizes the application of diamond-based devices.

Published

2022-03-07

How to Cite

Yu Yao, Dandan Sang, Liangrui Zou, Xueting Wang, & Qinglin Wang. (2022). Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction. Recent Trends in Chemical and Material Sciences Vol. 7, 42–51. https://doi.org/10.9734/bpi/rtcams/v7/3552E

Issue

Recent Trends in Chemical and Material Sciences Vol. 7

Section

Chapters