Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction: A Review
DOI:
https://doi.org/10.9734/bpi/rtcams/v7/3551EKeywords:
Diamond-based, one-dimensional metal oxide, heterojunction, high temperatureAbstract
The optoelectronic properties of diamond-based one-dimensional metal-oxide heterojunctions are the primary focus of this review. We begin by briefly introducing the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the characteristics of the p-type boron-doped diamond (BDD) film; then, we explain the use of three oxide types (ZnO, TiO2, and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behaviour, and negative differential resistance behaviour, particularly at higher temperatures. Finally, we analyse the research's problems and prospective trends. The findings of a decade of research into high-performance diamond-based heterojunctions will aid in the creation of photoelectric nano-devices for high-temperature and high-power applications.