Study on \(\gamma\)-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires
DOI:
https://doi.org/10.9734/bpi/rtcams/v4/1950CKeywords:
Nano devices, circuit industry, molecular junctions, gamma doses, micro structuresAbstract
This contribution reports on the effect of \(\gamma\)-irradiations on the structural and morphological properties of copper nanowires (Cu-NWs) within the \(\gamma\) doses varying from 6 to 25 kGy. At 9 kGy, the Cu-NWs started welding, forming perfect X-,V-, II-, and Y-shaped molecular junctions. Further increasing the \(\gamma\) dose up to 15 kGy caused the Cu-NWs to fuse and form larger diameter NWs. At the highest dose of 25 kGy, the nanowires converted into a continuous Cu thin film. However, X-ray diffraction (XRD) results showed that the structure of the Cu-NWs remained stable even after converting into a thin film. The formation of the Cuprite (Cu2O) phases was observed at higher \(\gamma\) dose. The mechanism of forming welded networks of Cu-NWs and Cu thin films is explained via the short and high energy \(\gamma\)-ray wavelengths which act on Cu-Cu molecular covalent bonds isotropically. The welding technique is for the fabrication of large scale junction like structures. These nano devices are useful for the formation of nanoelectronics and the nano circuit industry.