TEM Cross-Section Sample (XTEM) Preparation of nc-Si/a-SiO2 Multi-Layer Thin Film Using cryo Ar+ Ion Slicing for Microstructural Analyses

Abstract

Thin films of multi-layerd nanocrystalline silicon (nc-Si) have established wide attention in the field of third generation solar cells. In this chapter, the amorphous hydrogenated a-Si:H/a-SiO₂ multi-layered films deposited by plasma enhanced chemical vapour deposition (PECVD) is reported. Then the as-deposited thin film was annealed at 1100ºC to get the nc-Si/a-SiO₂ multilayer. The structure of the as-deposited and annealed thin film was studied by X-ray diffraction (XRD) analysis for the confirmation of the crystal structure. Besides, this chapter mainly reports the ultrathin specimen preparation of (nc-Si/a-SiO₂) multilayer film for the HR-TEM analyses by using Ar⁺ ion slicing (milling) method. Several early preparation steps, including as cutting, gluing, and mechanical thinning, are included in the Ar⁺ ion slicing procedure. This slicing method yields a minimal trial, high yield, and thin cross-section suitable for high resolution transmission electron microscopy (HR-TEM) analysis. The procedure for the preparation of ultra-thin cross-sectional specimen for TEM (XTEM) is reported step by step in this chapter. The textured multi-layers and the thickness of nc-Si/a-SiO₂ were analysed using TEM and HR-TEM modes.