Si\(_x\)Ge\(_{1-x}\) Thermoelectric: Determination of Electronic Quality Factor, Universal Electrical Conductivity, Effective Mass, Mobility of Charge Carriers and Preparation of Monolithic Module Based on Si\(_{0.7}\)Ge\(_{0.3}\) Alloy

Authors

  • Guram Bokuchava Sukhumi Institute of Physics and Technology, Georgia.
  • Irakli Nakhutsrishvili Institute of Cybernetics of Georgian Technical University, Georgia.
  • Karlo Barbakadze Sukhumi Institute of Physics and Technology, Georgia.

DOI:

https://doi.org/10.9734/bpi/fraps/v4/18953D

Keywords:

Thermoelectric SiGe, electronic quality factor, universal electrical conductivity, monolithic thermoelectric module

Abstract

The temperature dependences of the electronic quality factor and the universal electrical conductivity of n- and p-type Six Ge1-x, as well as the dependences of the Seebeck coefficient on the specific and the universal conductivities, are studied. The effective masses and mobilities of charge carriers are calculated for different temperatures, temperature dependences of the eleqtronic quality factor and the thermoelectric figure of merit are studied. Monolithic packages based on an alloy with the composition Si0.7Ge0.3 of n- and p-type conductivity are made. The energy characteristics of these monolithic thermoelectric modules have been studied.

Published

2023-05-20

How to Cite

Guram Bokuchava, Irakli Nakhutsrishvili, & Karlo Barbakadze. (2023). Si\(_x\)Ge\(_{1-x}\) Thermoelectric: Determination of Electronic Quality Factor, Universal Electrical Conductivity, Effective Mass, Mobility of Charge Carriers and Preparation of Monolithic Module Based on Si\(_{0.7}\)Ge\(_{0.3}\) Alloy. Fundamental Research and Application of Physical Science Vol. 4, 113–126. https://doi.org/10.9734/bpi/fraps/v4/18953D

Issue

Fundamental Research and Application of Physical Science Vol. 4

Section

Chapters