Numerical Simulation of CTS/CdS Thin-Film Solar Cell

Authors

  • Sabina Rahaman Department of Electronics and Communication, BMS Institute of Technology and Management, Bangalore, India.
  • M. S. Sumathi Department of Electronics and Telecommunication, BMS Institute of Technology and Management, Bangalore, India.
  • K. B. Jagannatha Department of Electronics and Communication, BMS Institute of Technology and Management, Bangalore, India.
  • K. V. Balvanth Gowda Department of Electronics and Communication, BMS Institute of Technology and Management, Bangalore, India.

DOI:

https://doi.org/10.9734/bpi/taier/v9/6286F

Keywords:

Cu2Sn3 thin film solar cell, SCAPS simulator, absorber layer

Abstract

In this book chapter, we have proposed new structure of Cu2SnS3 (CTS)/CdS thin-film solar cells using numerical modelling. Cell results are obtained by SCAP-1D solar simulator. Absorber layer thickness, and temperature is varied to optimise the CTS based cell performance. This study also examines the growth and recombination rates of CTS/CdS. Using this simulator, open circuit voltage, short circuit current density, fill factor and efficiency of the proposed cell is inspected. Open circuit voltages of 0.6V and fill factor of 72.89% was observed to enhance solar cell performance. CTS-based solar cell with CdS buffer layer showed a power conversion efficiency of 9.87% under optimum conditions.

Published

2023-03-17

How to Cite

Sabina Rahaman, M. S. Sumathi, K. B. Jagannatha, & K. V. Balvanth Gowda. (2023). Numerical Simulation of CTS/CdS Thin-Film Solar Cell. Techniques and Innovation in Engineering Research Vol. 9, 62–70. https://doi.org/10.9734/bpi/taier/v9/6286F

Issue

Techniques and Innovation in Engineering Research Vol. 9

Section

Chapters