H. D. SUNITHA; N. KESHAVENI. Design & Optimization of LDMOS Transistor Using Doped Silicon Pockets in Buried Oxide . Techniques and Innovation in Engineering Research Vol. 4, [S. l.], p. 66–82, 2022. DOI: 10.9734/bpi/taier/v4/3477C. Disponível em: https://stm.bookpi.org/TAIER-V4/article/view/8705. Acesso em: 13 jun. 2026.