Half Doped Mg-Zn Aluminates: A Study of Their Feasibility in Advanced Applications

Abstract

The spinel materials based on MgAl₂O₄ are technologically very important materials and its modification through different aspects makes it an intriguing material from application point of view. Hereby, we report Mg_0.5-xM_xZn_0.5Al₂O₄ (x = 0, 0.05 and M = Co, Ni, Cu) aluminates synthesized via high temperature solid state reaction route. These aluminate materials were characterized for structural, optical, and electrical properties. Rietveld refinement of XRD data infer the sample crystallization into the cubic phase (Fd-3m). The Fourier transform Infra-red (FTIR) and Raman inelastic scattering spectral analysis confirms the desired sample formation via display of characteristic absorption bands. Dielectric study at room temperature reveals that these materials inherit low dielectric constant up to few hundreds with convincing very low loss value. Optical bandgap (Eg) determined exploiting UV-Vis characterization technique was found to reduce from 5.17eV for pristine to 3.9eV for Cu₂₊ doping. Also electrical modulus and impedance behaviour is addressed to understand the conduction mechanism and responsible factors. In addition, the electrical polarization at different field values are reported. Furthermore, we emphasized on morphology, composition and ac conductivity in light of Jonscher’s law.