A Detailed Review on the Properties and Applications of WO3 Nanostructure-Based Optical and Electronic Devices

Abstract

Tungsten oxide (WO₃) is a wide bandgap semiconductor exhibiting unintentionally doped n-type, excellent electrical conductivity and high electron Hall mobility, and is therefore considered as a candidate material for application in optoelectronics. Reviews on the applications of WO₃ and its derivatives in electrochemistry, photochemistry, hybrid photocatalysts, electrochemical energy storage, and gas sensors have also been appearing recently. In addition, nanostructured transition metal oxides have attracted a lot of attention in the past decade due to their unique chemical, photochromic, and physical properties. And among these transition metal oxides, the applications of WO₃ nanostructure-based optical and electronic devices have gradually attracted extensive research interest due to their unique photoluminescence (PL), electrochromic, and electrical properties. This review focuses on recent advances related to WO₃, starting from fundamental analysis to improve the optoelectronic, electrochromic, and photochromic properties of WO₃ and to develop advanced devices based on tungsten oxide for optical and electronic applications, including photodetectors, light-emitting diodes (LEDs), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO₃-related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.