Study of Anisotropic Strain in Self-Assembled GaN Microdisks Grown by Molecular Beam Epitaxy

Authors

  • Ying-Chieh Wang Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Hong-Yi Yang Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Ikai Lo Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan and Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Cheng-Da Tsai Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Huei-Jyun Shih Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Hui-Chun Huang Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Mitch M. C. Chou Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.
  • Louie Huang Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.
  • Terence Wang Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.
  • Ching T. C. Kuo Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.

DOI:

https://doi.org/10.9734/bpi/rpcsr/v6/3062C

Keywords:

Plasma-assisted molecular beam epitaxy, GaN-microdisks, anisotropic strain

Abstract

Systematic research has been done on lattice relaxation on wurtzite GaN microdisks produced by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscopy was used to assess the lattice constants of GaN microdisks. The anisotropic strain was analyzed by the microscopic atomic layers of GaN microdisks. We learned that the lateral lattice strain along a-axis followed a linear relation during the epi-growth, while the vertical lattice strain with c-axis exhibited a quadratic deviation.

Published

2023-01-16

How to Cite

Ying-Chieh Wang, Hong-Yi Yang, Ikai Lo, Cheng-Da Tsai, Huei-Jyun Shih, Hui-Chun Huang, … Ching T. C. Kuo. (2023). Study of Anisotropic Strain in Self-Assembled GaN Microdisks Grown by Molecular Beam Epitaxy. Recent Progress in Chemical Science Research Vol. 6, 1–14. https://doi.org/10.9734/bpi/rpcsr/v6/3062C

Issue

Recent Progress in Chemical Science Research Vol. 6

Section

Chapters