Experimental Analysis of SnS:Cu Thin Films Obtained by USP for their Implementation in Solar Cells Simulated by SCAPS

Abstract

Thin films of tin sulfide (SnS) doped with copper (SnS:Cu) obtained by ultrasonic spray pyrolysis (USP) technique were obtained. Doping concentrations "y" (y = [Cu]/[Sn]) were proposed at 0 (no doping sample), 2, 5, and 10%. The thin films were studied using various techniques to obtain their structural, morphological, chemical, optical, and electrical properties. X-ray diffraction (XRD) reveals an orthorhombic structure for the undoped sample, while a cubic structure is revealed for doped thin films. Raman spectroscopy suggests a possible unit cell size change due to the addition of the dopant agent Cu. Scanning electron microscopy (SEM) shows a growth in the grain density when y is increased. Using the UV-VIS spectroscopy technique, the transmittance and reflectance of the films were studied to obtain the optical bandgap. This study revealed a bandgap of 3.51 eV for the sample at y = 0%, and this value increases for the doped samples when the parameter y increases. Hall–Van der Pauw technique showed a rise in both carrier concentration and mobility but a decrease in resistivity when the doping percentage is increased.

The collected experimental information was employed to recreate the material and its impact on a solar cell through numerical simulation using the 1-dimensional SCAPS program. The different SnS:Cu doped was proposed as absorber layers inside the photovoltaic device to evaluate the performance. The role of SnS:Cu thickness on the efficiency of the cell was discus.