N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding
DOI:
https://doi.org/10.9734/bpi/mono/978-93-5547-643-2/CH13Keywords:
Microwave afterglows, R/N2-H2 with R=N2,He, Ar gas mixtures, N,H and C atoms density, wall destruction probability, N-atom inclusion in TiO_2 surfaceAbstract
Variations of and -atoms density have been determined along the reduced pressure flowing afterglows of microwave and discharges with , He and Ar. Density of and -atoms and other nitrogen active species such as were obtained from that of -atoms calibrated by titration, using the method of band intensity ratios in several conditions (between early and late afterglows). It has been obtained in addition the density of O-atoms and NO molecules coming from air impurity. It has been deduced the wall destruction probability of and -atoms on the quartz afterglow tube , and . The effects of and -atoms on -atoms inclusion inside surfaces are reported.
Published
2022-07-26
How to Cite
A. Ricard, J. Amorim, M. Abdeladim, J. P. Sarrette, & Y. K. Kim. (2022). N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding. Plasmas Afterglows With \(N_2\) for Surface Treatments- Edition 2, 61–117. https://doi.org/10.9734/bpi/mono/978-93-5547-643-2/CH13
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