N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding

Authors

  • A. Ricard LAPLACE, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, 31062 Toulouse cedex 9, France.
  • J. Amorim Department Fisica, Inst. Tec. Aeronautica, CTA, Sao Jose de Campos 12228-900, Brazil.
  • M. Abdeladim LMSE, Fac. Génie Electrique, USTO, El Mnaour-Oran, BP 1505, Bir El Djir, Algeria.
  • J. P. Sarrette LAPLACE, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, 31062 Toulouse cedex 9, France.
  • Y. K. Kim Department of Energy Systems Research and Department of Chemistry, Ajou University, Suwon 16499, Korea.

DOI:

https://doi.org/10.9734/bpi/mono/978-93-5547-643-2/CH13

Keywords:

Microwave afterglows, R/N2-H2 with R=N2,He, Ar gas mixtures, N,H and C atoms density, wall destruction probability, N-atom inclusion in TiO_2 surface

Abstract

Variations of  and -atoms density have been determined along the reduced pressure flowing afterglows of microwave  and  discharges with , He and Ar. Density of  and -atoms and other nitrogen active species such as  were obtained from that of -atoms calibrated by  titration, using the method of band intensity ratios in several conditions (between early and late afterglows). It has been obtained in addition the density of O-atoms and NO molecules coming from air impurity. It has been deduced the wall destruction probability of  and -atoms on the quartz afterglow tube ,  and . The effects of  and -atoms on -atoms inclusion inside  surfaces are reported.

Published

2022-07-26

How to Cite

A. Ricard, J. Amorim, M. Abdeladim, J. P. Sarrette, & Y. K. Kim. (2022). N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding. Plasmas Afterglows With \(N_2\) for Surface Treatments- Edition 2, 61–117. https://doi.org/10.9734/bpi/mono/978-93-5547-643-2/CH13