Examining Microwave Afterglows in N\(_2\) Gas Mixtures Using Spectroscopy and LIF: Application to Surface Cleaning
DOI:
https://doi.org/10.9734/bpi/mono/978-93-49473-93-5/CH13Keywords:
Microwave afterglows, N2 gas mixtures, N, O, H and C atoms density measurements techniques, TALIF, surface cleaningAbstract
Variations of N, H, O and C-atoms density have been determined along the reduced pressure flowing afterglows of microwave Ar-N2-H2 discharges that have been experimented with in Plasmas Labs of Nancy, Montreal, Orsay and Toulouse. In the present chapter, previous experiments in N2-O2, N2 - H2 and N2 - CH4 fulfilled by the LSGS(Nancy), Plasmas Lab (Montreal), LPGP (Orsay), Laplace (Toulouse) and SNPE (Bordeaux) are reported. The active species density is obtained by NO titration for N and O-atoms and by line intensity ratios for the H and C-atoms. A small maximum of N-atom density in the range (0.5-3) 1015cm-3 was observed when a few H2 or CH4 was added to N2 and the C/N ratio was about 10-3 in the afterglow of studied microwave setups.
The results obtained by LIF measurements in Orsay and Toulouse Labs are reported for N and H -atoms. By comparing the TALIF and the results of H-atoms density obtained from OES in N2-1%H2 afterglows, it has been chosen the appropriate rate coefficient of the N+H+N2 reaction.
The surface cleaning by N and O-atoms has been experimented.