V. DONCHEV; M. MILANOVA; S. GEORGIEV. Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy. Newest Updates in Physical Science Research Vol. 7, [S. l.], p. 31–38, 2021. DOI: 10.9734/bpi/nupsr/v7/2234F. Disponível em: https://stm.bookpi.org/NUPSR-V7/article/view/1277. Acesso em: 24 jun. 2026.