Growth and Characterization of M-Plane GaN on \(\gamma\)-LiAlO2 (100) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Authors

  • Yu-Chiao Lin Bruker Taiwan co., Ltd., Taiwan.
  • Ikai Lo Department of Physics, National Sun Yat-sen University, Taiwan.
  • Hui-Chun Shih Department of Physics, National Sun Yat-sen University, Taiwan.
  • Mitch M. C. Chou Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Taiwan.
  • D. M. Schaadt Institute of Energy Research and Physical Technologies, Clausthal University of Technology (TUC), Germany.

DOI:

https://doi.org/10.9734/bpi/nfpsr/v5/3859B

Keywords:

M-plane GaN, LiAlO2, molecular beam epitaxy, non-polar GaN

Abstract

On LiAlO2 substrates, M-plane GaN thin films were produced using plasma-assisted molecular beam epitaxy at various N/Ga flux ratios. As the N/Ga flux ratio decreased, the GaN surface trended to a flat morphology with stripes along [11\(\bar{2}\)0] and exhibited a better crystal quality. This trend had been investigated that the substrate could be damaged by N2 plasma during the high N/Ga flux ratio growth condition and easily cause the formation of Li5GaO4 on the interface between GaN and substrate.

Published

2022-12-09

How to Cite

Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, Mitch M. C. Chou, & D. M. Schaadt. (2022). Growth and Characterization of M-Plane GaN on \(\gamma\)-LiAlO2 (100) Substrates by Plasma-Assisted Molecular Beam Epitaxy. New Frontiers in Physical Science Research Vol. 5, 83–92. https://doi.org/10.9734/bpi/nfpsr/v5/3859B

Issue

New Frontiers in Physical Science Research Vol. 5

Section

Chapters