The Chemresistive Properties of SiC Nanocrystalline Films with Different Conductivity Type: Experimental Results

Authors

  • A. V. Semenov National Technical University “Kharkiv Polytechnic Institute” 2, Kyrpychova Str., Kharkiv, 61002, Ukraine.
  • D. V. Lubov National Technical University “Kharkiv Polytechnic Institute” 2, Kyrpychova Str., Kharkiv, 61002, Ukraine.
  • A. A. Kozlovskyi Institute for Single Crystals NAS of Ukraine, Nauky Ave. 60, Kharkiv, 61001, Ukraine.

DOI:

https://doi.org/10.9734/bpi/ist/v4/1815B

Keywords:

Silicon carbide based gas sensors, nanocrystalline silicon carbide film, gas sensivity, conductivity type effect on gas sensivity

Abstract

We have demonstrated the ability of thin nanocrystalline SiC films with various types of conductivity to detect oxidative (O2), reducing gases (CO, CH4) with the maximum allowable concentrations for human safety. It was shown that n-nc-SiC films with electronic conductivity had a higher gas sensitivity Sn than p-nc-SiC films with hole conductivity sensivity Sp to the action of gases in a wide concentration range. So, for the maximum permissible concentrations of O2 (3%), CO (0.1%), CH4 (10%) the  sensitivity ratio of the films Sn / Sp was  2.9; 4.8  and 10, respectively. For research, we used a simple resistor geometry optimizing which it is possible to significantly increase the sensitivity of films to gases in order to detect extremely low gas concentrations. Thus, based on nc-SiC films, it is possible to develop high-temperature gas sensors to detect reactive gases in a wide range of concentrations, including threshold allowable values.

Published

2022-02-03

How to Cite

A. V. Semenov, D. V. Lubov, & A. A. Kozlovskyi. (2022). The Chemresistive Properties of SiC Nanocrystalline Films with Different Conductivity Type: Experimental Results. Innovations in Science and Technology Vol. 4, 107–116. https://doi.org/10.9734/bpi/ist/v4/1815B