S. Toumi. Investigation of the Inhomogeneity Phenomenon in the Metal/Semiconductor Interface: Mo/n-type-4H-SiC Schottky Diode. FRAPS-V6 [Internet]. 2023 Jun. 8 [cited 2026 Jun. 4];:122-4. Available from: https://stm.bookpi.org/FRAPS-V6/article/view/10835