S. TOUMI. Investigation of the Inhomogeneity Phenomenon in the Metal/Semiconductor Interface: Mo/n-type-4H-SiC Schottky Diode. Fundamental Research and Application of Physical Science Vol. 6, [S. l.], p. 122–142, 2023. DOI: 10.9734/bpi/fraps/v6/5218C. Disponível em: https://stm.bookpi.org/FRAPS-V6/article/view/10835. Acesso em: 4 jun. 2026.