N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding

Abstract

Variations of N,H and C-atoms density have been determined along the reduced pressure flowing afterglows of microwave R/N₂-H₂ and R/N₂-CH₄  discharges with R=N₂, He and Ar. Density of H and C-atoms and other nitrogen active species such as  N₂(A), N₂(X,v>13), N₂⁺,NH, N(²D), CN were obtained from that of  N-atoms calibrated by NO titration , using the method of band intensity ratios in several conditions (between early and  late afterglows). It has been obtained in addition the density of O-atoms and NO molecules coming from air impurity. It has been deduced the wall destruction probability of  H, O and C-atoms on the quartz afterglow tube: ?_H^R,N2  = (1-3) 10^-3 , ?_O^R,N2  =(0.4-1) 10^-3 and ?_C^N2=(0.7) 10^-3. The effects of H and C –atoms on N-atoms inclusion inside TiO₂ surfaces are reported.