Hamid FARDI. Modeling High Blocking Voltage and Doping in 4H Silicon Carbide Bipolar Junction Transistors. Current Approaches in Engineering Research and Technology Vol. 3, [S. l.], p. 170–187, 2024. DOI: 10.9734/bpi/caert/v3/155. Disponível em: https://stm.bookpi.org/CAERT-V3/article/view/14581. Acesso em: 4 jun. 2026.